Job Title: Silicon Carbide Crystal Growth Engineer

Position Summary

We are seeking a highly motivated and detail-oriented engineer or scientist to join our crystal growth team specializing in silicon carbide (SiC) material synthesis. The ideal candidate will be responsible for operating and optimizing crystal growth processes, improving material quality, and contributing to next-generation semiconductor materials development.

 Key Responsibilities

• Operate and maintain high-temperature crystal growth furnaces (e.g. sublimation or PVT methods)
• Optimize growth parameters to improve yield, crystal size, and defect reduction
• Characterize SiC crystals using techniques such as X-ray diffraction, Raman spectroscopy, and electron microscopy
• Collaborate with process engineers, technicians, and product teams to scale up production and enhance crystal quality
• Document experimental procedures and prepare technical reports
• Assist in troubleshooting equipment and process issues
• Stay current with emerging trends in wide-bandgap semiconductor materials

Qualifications

• Bachelor’s, Master’s, or PhD in Materials Science, Physics, Electrical Engineering, or a related field
• Hands-on experience with crystal growth techniques or furnace operation strongly preferred
• Familiarity with SiC properties and applications in power electronics a plus
• Strong analytical and problem-solving skills
• Excellent communication and collaboration abilities

Preferred Skills

• Experience with process automation and data logging systems
• Understanding of thermodynamics, kinetics, and phase diagrams relevant to crystal growth
• Cleanroom or high-temp lab experience